LE28F4001C - 4M-Bit (512k 8) Flash EEPROM

Product Overview

Sanyo Semicon Device

Part number	LE28F4001C
Manufacturer	Sanyo Semicon Device
File Size	168.99 KB
Description	4M-Bit (512k 8) Flash EEPROM
Datasheet	LE28F4001C Datasheet
Additional preview pages of the LE28F4001C datasheet.

The LE28F4001C is a 512K ×8 CMOS sector erase, byte program EEPROM.

The LE28F4001C is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology.

CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max. ) Standby Current: 20 µA (Max. ) High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Latched Address and Data Self-timed Erase and Programming Byte Programming: 40µs (Max. ) End of Write Detection:Toggle Bit/ DATA Polling Hardware/Software Data Protection JEDEC Standard B.

Other Datasheets by Sanyo Semicon Device

LE28F4001CTS - 4M-Bit (512k 8) Flash EEPROM
LE28F4001CTS-12 - 4M-Bit (512k 8) Flash EEPROM
LE28F4001M - 4 MEG (524288 words x 8 bits) Flash Memory
LE28F4001R - 4 MEG (524288 words x 8 bits) Flash Memory
LE28F4001R-15 - 4 MEG (524288 words x 8 bits) Flash Memory
LE28F4001R-20 - 4 MEG (524288 words x 8 bits) Flash Memory
LE28F4001T - 4 MEG (524288 words x 8 bits) Flash Memory
LE28FV4001M - 4MEG (52488 x 8 Bits) Flash Memory

Published: Mar 22, 2005 |