Datasheet4U.com

LE28FV4001T - 4MEG (52488 x 8 Bits) Flash Memory

Product Overview

Sanyo Semicon Device

📥 Download Datasheet

LE28FV4001T 4MEG (52488 x 8 Bits) Flash Memory by Sanyo Semicon Device - Datasheet Preview — Datasheet preview – LE28FV4001T

Datasheet Details

Part number	LE28FV4001T
Manufacturer	Sanyo Semicon Device
File Size	230.16 KB
Description	4MEG (52488 x 8 Bits) Flash Memory
Datasheet	LE28FV4001T Datasheet
Additional preview pages of the LE28FV4001T datasheet.

LE28FV4001T Product details

Features

Highly reliable 2 layer polysilicon CMOS flash EEPROM process.
Read and write operations using a 3.3 V single-voltage power supply.
High-speed access: 200 and 250 ns.
Low power.
Operating (read): 10 mA (maximum).
Standby: 20 µA (maximum).
Highly reliable read write.
Number of sector write cycles: 104 cycles.
Data retention: 10 years.
Address and data latches.
Sector erase function: 256 bytes per se.

📁 Similar Datasheet

LE28DW3212AT-80B - 32 Megabit FlashBank Memory (Sanyo)
LE28DW8102T - 8 Megabit FlashBank Memory (Sanyo)
LE24162LBXA - Two Wire Serial Interface EEPROM (ON Semiconductor)
LE24162LBXA - Two Wire Serial Interface EEPROM (Sanyo)
LE24163LBXA - 16kb I2C CMOS Serial EEPROM (ON Semiconductor)
LE2416DXA - EEPROM (ON Semiconductor)
LE2416RDXA - EEPROM (ON Semiconductor)
LE2416RLBXA - Two Wire Serial Interface EEPROM (ON Semiconductor)
LE2416RLBXA - Two Wire Serial Interface EEPROM (Sanyo)
LE2464C - 64-kb I2C CMOS Serial EEPROM (ON Semiconductor)

Other Datasheets by Sanyo Semicon Device

LE28FV4001M - 4MEG (52488 x 8 Bits) Flash Memory
LE28FV4001R - 4MEG (52488 x 8 Bits) Flash Memory
LE28FV4001R-20 - 4MEG (52488 x 8 Bits) Flash Memory
LE28FV4001R-25 - 4MEG (52488 x 8 Bits) Flash Memory
LE28F4001C - 4M-Bit (512k 8) Flash EEPROM
LE28F4001CTS - 4M-Bit (512k 8) Flash EEPROM
LE28F4001CTS-12 - 4M-Bit (512k 8) Flash EEPROM
LE28F4001M - 4 MEG (524288 words x 8 bits) Flash Memory

Published: Mar 22, 2005 |