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RD0106T - High-Speed Switching Diode

Key Features

  • Diffused Junction Silicon Diode Low VF.
  • High-Speed Switching Diode High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V). Low switching noise. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 600 1 Sine wave.

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www.DataSheet.co.kr Ordering number : ENA1704 RD0106T SANYO Semiconductors DATA SHEET RD0106T Features • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V). Low switching noise. Halogen free compliance.