High-Speed Switching Diode
High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V). Low switching noise. Halogen free compliance. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 600 1 Sine wave.
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Ordering number : ENA1704
RD0106T
SANYO Semiconductors
DATA SHEET
RD0106T
Features
• • • • •
Diffused Junction Silicon Diode
Low VF • High-Speed Switching Diode
High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V). Low switching noise. Halogen free compliance.