SFT1201 - NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Product Overview

Sanyo Semicon Device

Part number	SFT1201
Manufacturer	Sanyo Semicon Device
File Size	78.51 KB
Description	NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
Datasheet	SFT1201 Datasheet
Additional preview pages of the SFT1201 datasheet.

Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature.

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Other Datasheets by Sanyo Semicon Device

SFT1202 - NPN Transistor
SFT1101 - PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
SFT1102 - PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
SFT1302 - General-Purpose Switching Device Applications
SFT1327 - P-Channel Silicon MOSFET General-Purpose Switching Device Applications
SFT1341 - General-Purpose Switching Device Applications

Published: Feb 24, 2010 |