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SFT1201 - NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

Key Features

  • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature.

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Datasheet Details

Part number SFT1201
Manufacturer SANYO (now Panasonic)
File Size 78.51 KB
Description NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
Datasheet download datasheet SFT1201 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1168 SFT1201 www.DataSheet4U.com SANYO Semiconductors DATA SHEET SFT1201 Applications • NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation.