SFT1201
Overview
- Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation.
| Part | SFT1201 |
|---|---|
| Description | NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications |
| Category | Transistor |
| Manufacturer | SANYO |
| Size | 78.51 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| SFT1202 | onsemi | Bipolar Transistor |
| SFT1202 | Inchange Semiconductor | NPN Transistor |