Datasheet Details
| Part number | SFT1202 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 246.52 KB |
| Description | NPN Transistor |
| Datasheet | SFT1202-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | SFT1202 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 246.52 KB |
| Description | NPN Transistor |
| Datasheet | SFT1202-INCHANGE.pdf |
|
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·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.165V(Max)( IC= 1A;
IB= 0.1A) ·Fast -Switching speed ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC/DC converter ·Relay dirvers ·Lamp dirvers ·Motor dirvers，inverter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current Collector Power Dissipation PC Ta=25℃ Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 180 V 150 V 7 V 2 A 3 A 0.4 A 1 W 15 150 ℃ -55~150 ℃ SFT1202 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE=10uA,IC=0 V (BR)CEO) Collector-Emitter Breakdown Voltage IC=1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC=10uA ,IE=0 VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC= 1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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SFT1202 | NPN Transistor | Sanyo Semicon Device |
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SFT1202 | Bipolar Transistor | ON Semiconductor |
| Part Number | Description |
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