| Part Number | SFT1202 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
Ordering number : ENA1169A
SFT1202
Bipolar Transistor
150V, 2A, Low VCE(sat), NPN Single TP/TP-FA
Applications
• DC / DC converter, relay drivers, lamp drivers, motor drivers, in.
* Adoption of FBET, MBIT process * Low collector-to-emitter saturation voltage * High allowable power dissipation * Large current capacity * High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitte. |
SFT1202 Datasheet and Specifications PDF
The SFT1202 is a Bipolar Transistor.
Key Specifications
| Package | DPAK |
|---|---|
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | SFT1202 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.165V(Max)( IC= 1A; IB= 0.1A) ·Fast -Switching speed ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performa. S V(BR)EBO Emitter-Base Breakdown Voltage IE=10uA,IC=0 V (BR)CEO) Collector-Emitter Breakdown Voltage IC=1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC=10uA ,IE=0 VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC= . |
| Part Number | SFT1202 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | SANYO |
| Overview |
Ordering number : ENA1169
SFT1202
SANYO Semiconductors
DATA SHEET
SFT1202
Applications
•
NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
DC / DC .
* * * * * Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-. |