SFT1202 - NPN Transistor

Product Overview

Sanyo Semicon Device

Part number	SFT1202
Manufacturer	Sanyo Semicon Device
File Size	78.59 KB
Description	NPN Transistor
Datasheet	SFT1202 Datasheet
Additional preview pages of the SFT1202 datasheet.

Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature.

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Other Datasheets by Sanyo Semicon Device

SFT1201 - NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
SFT1101 - PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
SFT1102 - PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
SFT1302 - General-Purpose Switching Device Applications
SFT1327 - P-Channel Silicon MOSFET General-Purpose Switching Device Applications
SFT1341 - General-Purpose Switching Device Applications

Published: Feb 24, 2010 |