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TIG052TS - N-Channel IGBT

Key Features

  • N-Channel IGBT Light-Controlling Flash.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA1258 TIG052TS SANYO Semiconductors DATA SHEET TIG052TS Features • • • • • • N-Channel IGBT Light-Controlling Flash Applications Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.* Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP dVCE / dt Tch Tstg PW≤1ms PW≤500μs, duty cycle≤0.5%, CM=400μF, VGE=2.