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TS788 - N- channel Junction FET Electret Condenser Microphone

Key Features

  • Especially suited for use in electret condenser microphone.
  • TS788 is possible to make applied sets smaller and Slimmer.
  • Excellent voltage characteristics.
  • Excellent transient characteristics.
  • Adoption of FBET process. Absolute Maximum Ratings / Ta=25°C Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature VGDO IG ID PD Tj Tstg --20 10 1 100 150 --55to+150 min --20 --0.2 140g 0.4 unit.

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TS788 N- channel Junction FET Electret Condenser Microphone TENTATIVE Features • Especially suited for use in electret condenser microphone. • TS788 is possible to make applied sets smaller and Slimmer. • Excellent voltage characteristics. • Excellent transient characteristics. • Adoption of FBET process. Absolute Maximum Ratings / Ta=25°C Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature VGDO IG ID PD Tj Tstg --20 10 1 100 150 --55to+150 min --20 --0.2 140g 0.4 unit V mA mA mW °C °C typ --0.6 1.2 4.1 0.88 max --1.