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TS7920 - For Inverter Lighting Equipment

Key Features

  • Package Dimensions unit : mm 2010C [TS7920] 10.2 3.6 5.1 2.7 6.3 Best suited for push-pull inverter circuit. High breakdown voltage (VCBO=1200V). High reliability (Adoption of HVP process). Adoption of MBIT process. 4.5 1.3 18.0 5.6 1.2 14.0 0.8 15.1 0.4 1 2 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Col.

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www.DataSheet4U.com Ordering number : ENN6921 TS7920 NPN Triple Diffused Planar Silicon Transistor TS7920 For Inverter Lighting Equipment Features • • • • Package Dimensions unit : mm 2010C [TS7920] 10.2 3.6 5.1 2.7 6.3 Best suited for push-pull inverter circuit. High breakdown voltage (VCBO=1200V). High reliability (Adoption of HVP process). Adoption of MBIT process. 4.5 1.3 18.0 5.6 1.2 14.0 0.8 15.1 0.4 1 2 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions 2.55 2.55 2.