VEC2610 - N-Channel and P-Channel Silicon MOSFETs

Datasheet Summary

Features

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device.

Sanyo Semicon Device

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Datasheet Details

Part number	VEC2610
Manufacturer	Sanyo Semicon Device
File Size	115.54 KB
Description	N-Channel and P-Channel Silicon MOSFETs
Datasheet	VEC2610 Datasheet
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www.DataSheet.co.kr Ordering number : ENA0104 VEC2610 VEC2610 Features • • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications • • The best suited for inverter applications. The VEC2610 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. Mounting height 0.75mm. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.

Published: Jan 9, 2012 |