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Ordering number : ENA0425
VEC2611
SANYO Semiconductors
DATA SHEET
VEC2611
Features
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N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
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The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. 1.8V drive. Mounting height 0.75mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit Mounted on a ceramic board (900mm2✕0.