VEC2812 - N-Channel Silicon MOSFET / Schottky Barrier Diode

Features

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device.

Sanyo Semicon Device

Datasheet Details

Part number	VEC2812
Manufacturer	Sanyo Semicon Device
File Size	108.81 KB
Description	N-Channel Silicon MOSFET / Schottky Barrier Diode
Datasheet	VEC2812 Datasheet
Additional preview pages of the VEC2812 datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr Ordering number : ENA0392 VEC2812 SANYO Semiconductors DATA SHEET VEC2812 Features • • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage.

Published: Jan 9, 2012 |