VEC2818 - P-Channel Silicon MOSFET / Schottky Barrier Diode

Features

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device.

Sanyo Semicon Device

Datasheet Details

Part number	VEC2818
Manufacturer	Sanyo Semicon Device
File Size	123.51 KB
Description	P-Channel Silicon MOSFET / Schottky Barrier Diode
Datasheet	VEC2818 Datasheet
Additional preview pages of the VEC2818 datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr Ordering number : ENA0577 VEC2818 SANYO Semiconductors DATA SHEET VEC2818 Features • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage.

Published: Jan 9, 2012 |