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VEC2819 - P-Channel Silicon MOSFET / Schottky Barrier Diode

Features

  • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device.

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Datasheet Details

Part number VEC2819
Manufacturer Sanyo Semicon Device
File Size 124.97 KB
Description P-Channel Silicon MOSFET / Schottky Barrier Diode
Datasheet download datasheet VEC2819 Datasheet
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Full PDF Text Transcription

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www.DataSheet.co.kr Ordering number : ENA0536 VEC2819 SANYO Semiconductors DATA SHEET VEC2819 Features • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance • Ultrahigh-speed switching. • 1.8V drive. [SBD] • Low switching noise. • Low leakage current and high reliability due to planar structure.
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