Sanyo Electric 2SA1256
The 2SA1256 is classified by 1mA hFE as follows : 60 E3 120 90 E4 180 135 E5 180 Note : Marking : E hFE rank : 3, 4, 5 VCB=(–)10V, IE=0 VEB=(–)4V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)1mA VCB=–6V, f=1MHz VCE=–6V, IC=–1mA, f=31.9MHz VCE=–6V, IC=–1mA, f=100MHz VCE=–6V, IC=–1mA, f=100MHz NF, PG Test Circuit 1 : Base 2 : Emitter 3 : Collector SANYO : CP Ratings –30 –20 –5 –30 150 125 –55 to +125 Unit V V V mA W ˚C ˚C Ratings min typ 60* 150 230 1.1 11 2.5 22 max –0.1 –0.1 270* 1.7 20 Unit µA µA MHz pF ps dB dB L1 : 1mmø plated wire 10mmø 5T, tap : 2T from VBE side L2 : 1mmø plated wire...| Part No. | 2SA1256 |
|---|---|
| Datasheet | 2SA1256 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
APPLICATIONS
● Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers.FEATURES
● High fT (230MHz typ), and small Cre (1.1pF typ).● Small NF (2.5dB typ). Package Dimensions unit:mm 2018B [2SA1256] Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitace Base-to-Collector Time Constant Noise Figure Voltage Gain ICBO IEBO hFE fT Cre rbb', Cc NF PG * : The 2SA1256 is classified by 1mA hFE as follows : 60 E3 120 90 E4 180 135 E5 180 Note : Marking : E hFE rank : 3, 4, 5 VCB=(–)10V, IE=0 VEB=(–)4V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)1mA VCB=...
