Sanyo Electric 2SA1380
The 2SA1380/2SC3502 are classified by 10mA hFE as follows : Rank C D E F hFE 40 to 80 60 to 120 100 to 200 160 to 320 12 3 2.4 4.8 1.2 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 Ratings (–)200 (–)200 (–)5 (–)100 (–)200 1.2 5 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C Ratings min typ max Unit (–)0.1 µA (–)0.1 µA 40* 320* 150 MHz Continued on next page.| Part No. | 2SA1380 |
|---|---|
| Datasheet | 2SA1380 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High breakdown voltage : VCEO≥200V.● Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V.
● Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1380 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C ConditionsELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)150V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)10V, IC=(–)10mA Gain-Bandwidth Product fT VCE=(–)30V, IC=(–)10mA * : Any and all SANYO products described or contained herein do not have specifications that can handle app...
