Sanyo Electric 2SA1766
PNP Epitaxial Planar Silicon Transistors
| Part No. | 2SA1766 |
|---|---|
| Datasheet | 2SA1766 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Adoption of FBET, MBIT processes.● High DC current gain (hFE=500 to 1200).
● Large current capacity.
● Low collector-to-emitter saturation voltage.
● High VEBO. Package Dimensions unit:mm 2038 [2SA1766] Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP IB PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Mounted on ceramic board (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) VCB=–20V, IE=0 VEB=–10V, IC=0 VCE=–5V, IC=–10mA VCE=–5V, IC=–200mA VCE=–10V, IC=–10mA VCB=–10V, f=1MHz IC=–200mA, IB=–4mA...
