Sanyo Electric 2SA1784
The 2SA1784/2SC4644 are classified by 50mA hFE as follows : 60 D 120 100 E 200 Switching Time Test Circuit Ratings min typ (–)400 (–)400 (–)5 0.25 5.0 max Unit V V V µs µs RL=3kΩ, RB=200Ω, at IC=50mA (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) No.3520–2/4 2SA1784/2SC4644 No.3520–3/4 2SA1784/2SC4644 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the...| Part No. | 2SA1784 |
|---|---|
| Datasheet | 2SA1784 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Adoption of MBIT process.● High breakdown voltage (VCEO≥400V).
● Excellent linearity of hFE. PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver
APPLICATIONS
Package Dimensions unit:mm 2064 [2SA17814/2SC4644] ( ) : 2SA1784 SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT Cob Cre VCE(sat) VCB=(–)300V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)50mA VCE=(–)30V, IC=(–)10mA VCB=(–)30V, f=1MHz VCB=(–)30V, f=1MHz I...
