Sanyo Electric 2SA1785
The 2SA1785/2SC4465 are classified by 100mA hFE as follows : Rank C D E hFE 40 to 80 60 to 120 100 to 200 1 : Emitter 2 : Collector 2.54 3 : Base SANYO : NMP Ratings (–)400 (–)400 (–)5 (–)1 (–)2 1 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ max Unit (–)1.0 µA (–)1.0 µA 40* 200* (50)70 MHz (12)8 pF (–)1.0 V (–)1.0 V Continued on next page.| Part No. | 2SA1785 |
|---|---|
| Datasheet | 2SA1785 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Large current capacity (IC=1A).● High breakdown voltage (VCEO≥400V). 2SA1785 : PNP Epitaxial Planar Silicon Transistor 2SC4645 : NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver
APPLICATIONS
Package Dimensions unit:mm 2064A [2SA1785/2SC4645] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 1.0 0.9 1 0.6 0.5 23 0.45 ( ) : 2SA1785 SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C 2.54 Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)300V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)10V, IC=(–)100mA Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)50mA Output Capacitance Cob VCB=(–)30V, f=1MHz Collector-to-Emitter Saturation Voltage V...
