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2SA2012 Datasheet PDF

Sanyo Electric 2SA2012

PNP/NPN Epitaxial Planar Silicon Transistors

Part No. 2SA2012
Datasheet 2SA2012 Download
Manufacturer
Sanyo Electric
Description PNP/NPN Epitaxial Planar Silicon Transistors
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2SA2012 datasheet page 1 preview

APPLICATIONS

APPLICATIONS

● Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2038A [2SA2012/2SC5565] 4.5 1.6 1.5

FEATURES

● Adoption of MBIT processes.
● Large current capacitance.
● Low collector-to-emitter saturation voltage.
● Ultrasmall-sized package permitting applied sets to be made small and slim.
● High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications ( ) : 2SA2012

ABSOLUTE MAXIMUM RATINGS

at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2×0.8mm) Tc=25˚C 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Conditions Ratings (–30)40 (–)30 (–)5 (–)5 (–)8 (–)600 1.3 3.5 150 –55 to +150 Unit V V V A A mA W W ˚C ˚C

ELECTRICAL CHARACTERISTICS

at Ta = 25˚C Par...
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