onsemi 2SA2012
Bipolar Transistor
| Part No. | 2SA2012 |
|---|---|
| Datasheet | 2SA2012 Download |
| Manufacturer |  onsemi |
| Description | Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
● Adoption of MBIT processes● Large current capacity
● Low collector to emitter saturation voltage
● Ultrasmall-sized package permitting applied sets to be made small and slim
● High allowable power dissipation Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings Unit --30 V --30 V --5 V --5 A --8 A Continued on next page. Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7007B-004 Top View 4.5 1.6 2SA2012-TD-E 1.5 Product & Package Information● Package : PCP
● JEITA, JEDEC : SC-62, SOT-89, TO-243
● Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD Marking 1.0 2.5 4.0 AS LOT No.
