Sanyo Electric 2SA2013
PNP/NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
APPLICATIONS
● Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2038A [2SA2013/2SC5566] 4.5 1.6 1.5FEATURES
● Adoption of FBET and MBIT processes.● High current capacitance.
● Low collector-to-emitter saturation voltage.
● High-speed switching.
● Ultrasmall package facilitates miniaturization in end products.
● High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications ( ) : 2SA2013
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2×0.8mm) Tc=25˚C 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Conditions Ratings (–50)80 (–)50 (–)6 (–)4 (–)7 (–)600 1.3 3.5 150 –55 to +150 Unit V V V A A mA W W ˚C ˚C Electrical Characterist...