2SA2062 Datasheet PDF

FEATURES

● Large current capacitance.
● Wide ASO and high durability against breakdown.
● Adoption of MBIT process. PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 10A, AF70W Output

APPLICATIONS

Specifications Note*( ) : 2SA2062

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C

ELECTRICAL CHARACTERISTICS

at Ta=25°C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol Conditions ICBO IEBO hFE(1) hFE(2) fT Cob VBE VCE(sat) V(BR)CBO V...