Sanyo Electric 2SB1295
The 2SB1295/2SD1935 are classified by 50mA hFE as follows : 2SB1295 135 5 270 200 6 400 300 7 600 Marking: 2SB1295 : UL/2SD1935 : CT hFE rank: 2SB1295 : 5, 6, 7/2SD1935 : 5, 6, 7, 8 Unit V V V A A mW ˚C ˚C Unit nA nA 2SB1935 135 5 270 200 6 400 300 7 600 450 8 900 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material...| Part No. | 2SB1295 |
|---|---|
| Datasheet | 2SB1295 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
APPLICATIONS
● AF power amplifier, medium-speed switching, smallsized motor drivers.FEATURES
● Large current capacity.● Low collector to emitter saturation voltage.
● Very small-sized package permitting sets to be made smaller and slimer. Package Dimensions unit:mm 2018A [2SB1295/2SD1935] ( ) : 2SB1295 Specifications C : Collector B : Base E : Emitter SANYO : CP
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)15 (–)15 (–)5 (–)0.8 (–)3 200 150 –55 to +150ELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE1 VCB=(–)12V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)50mA 135* (–)100 (–)100 900* (600) hFE2 VCE=(–)2V, IC=(–)800m...
