Sanyo Electric 2SB1324
PNP / NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
FEATURES
● Low saturation voltage.● Contains diode between collector and emitter.
● Contains bias resistance between collector and emitter.
● Large current capacity.
● Small-sized package making it easy to provide high-density, small-sized hybrid ICs. Specifications ( ) : 2SB1324
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Mounted on a ceramic board (250mm2✕0.8mm)ELECTRICAL CHARACTERISTICS
at Ta=25°C Parameter Collector Cutoff Current DC Current Gain Marking 2SB1324 : BL 2SD1998 : DM Symbol ICBO hFE1 hFE2 Conditions VCB=(--)30V, IE=0A VCE=(--)2V, IC=(--)0.5A VCE=(--)2V, IC=(--)2A Ratings (--)40 (--)30 (--)6 (--)3 (--)5 1.5 150 --55 to +150 Unit V V V A A W °C °C min 75 50 Ratings typ max (--)1.0 Unit μA Continued on next page. Any and a...