Sanyo Electric 2SB1397
PNP/NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
FEATURES
● Low saturation voltage.● Contains diode between collector and emitter.
● Contains bias resistance between base and emitter.
● Large current capacity.
● Small-sized package making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038 [2SB1397/2SD2100] ( ) : 2SB1397 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Mounted on ceramic board (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO hFE1 hFE2 fT VCB=(–)20V, IE=0 VCE=(–)2V, IC=(–)0.5A VCE=(–)2V, IC=(–)2A VCE=(–)2V, IC=(–)0.5A Output Capacitance Marking : 2SB1397 : BP 2SD2100 : DP Cob VCB=(–)10V, f=1MHz E : Emitter C : Collector...