Sanyo Electric 2SB816
The 2SB816/2SD1046 are classified by 1A hFE as follows : 60 D 120 100 E 200 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Ratings (–)150 (–)120 (–)6 (–)8 (–)12 80 150 –40 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 60* 20 15 (220) 160 max (–)0.1 (–)0.1 200* Unit mA mA MHz pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious...| Part No. | 2SB816 |
|---|---|
| Datasheet | 2SB816 Download |
| Manufacturer |  Sanyo Electric |
| Description | PNP/NPN Epitaxial Planar Silicon Transistors |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3).● Wide ASO because of built-in ballast resistance.
● Goode dependence of fT on current and good HF characteristic. Package Dimensions unit:mm 2022A [2SB816/2SD1046] ( ) : 2SB816 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Tc=25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)1A VCE=(–)5V, IC=(–)5A VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz * : The 2SB816/2SD1046 are classified by 1A hFE as follows :...
