Datasheet Details
| Part number | 2SB816 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.76 KB |
| Description | PNP Transistor |
| Datasheet | 2SB816-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB816.
| Part number | 2SB816 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.76 KB |
| Description | PNP Transistor |
| Datasheet | 2SB816-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1046 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF power amplifier, 50W output large power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 80 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB816 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;
RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB816 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SB816 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB812 | PNP Transistor |
| 2SB813 | PNP Transistor |
| 2SB817C | PNP Transistor |
| 2SB817E | PNP Transistor |
| 2SB823 | PNP Transistor |
| 2SB824 | PNP Transistor |
| 2SB825 | PNP Transistor |
| 2SB826 | PNP Transistor |
| 2SB827 | PNP Transistor |
| 2SB828 | PNP Transistor |