Inchange Semiconductor 2SB816
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SB816 |
|---|---|
| Datasheet | 2SB816 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)●Good Linearity of hFE
●Wide Area of Safe Operation
●Complement to Type 2SD1046
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for LF power amplifier, 50W output large power switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 80 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB816ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 V(BR)EBO Emitt...