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2SB816 - PNP Transistor

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Part number 2SB816
Manufacturer INCHANGE
File Size 215.76 KB
Description PNP Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SD1046 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF power amplifier, 50W output large power switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -120 V VEBO Em

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