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2SB817 - Silicon PNP Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) Good Linearity of hFE High Current Capability Wide Area of Safe Operation Complement to Type 2SD1047 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recomme

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1047 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Recommend for 60W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 100 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ 2SB817 isc website：www.