Download 2SB817 Datasheet PDF
2SB817 page 2
Page 2

Datasheet Summary

isc Silicon PNP Power Transistor DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) - Good Linearity of hFE - High Current Capability - Wide Area of Safe Operation - plement to Type 2SD1047 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Remend for 60W audio frequency amplifier output stage...