| Part number | 2SB817 |
|---|---|
| Datasheet | 2SB817 Datasheet PDF (Download) |
| File Size | 222.29 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
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·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB817 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB817 | PNP Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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2SB817C | Bipolar Transistor | ON Semiconductor |
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2SB817C | PNP Epitaxial Planar Silicon Transistor | Sanyo Electric |
