Part 2SB817E
Description PNP Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 191.21 KB
Inchange Semiconductor

2SB817E Overview

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) - Good Linearity of hFE - High Current Capability - Wide Area of Safe Operation - Complement to Type 2SD1047E - Minimum Lot-to-Lot variations for robust device performance and reliable operation.