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2SB817E - PNP Transistor

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Part number 2SB817E
Manufacturer INCHANGE
File Size 191.21 KB
Description PNP Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) Good Linearity of hFE High Current Capability Wide Area of Safe Operation Complement to Type 2SD1047E Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage

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