2SB817E datasheet by Inchange Semiconductor.
| Part number | 2SB817E |
|---|---|
| Datasheet | 2SB817E-INCHANGE.pdf |
| File Size | 191.21 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
··Collector-Emitter Breakdown Voltage- : isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB817E TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB817E | Power Transistor | TAITRON |
 |
2SB817 | PNP Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
 |
2SB817 | Silicon PNP Power Transistor | Inchange Semiconductor |
 |
2SB817C | Bipolar Transistor | ON Semiconductor |
 |
2SB817C | PNP Epitaxial Planar Silicon Transistor | Sanyo Electric |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB817C | PNP Transistor |
| 2SB812 | PNP Transistor |
| 2SB813 | PNP Transistor |
| 2SB816 | PNP Transistor |
| 2SB823 | PNP Transistor |
| 2SB824 | PNP Transistor |
| 2SB825 | PNP Transistor |
| 2SB826 | PNP Transistor |
| 2SB827 | PNP Transistor |
| 2SB828 | PNP Transistor |
