| Part Number | 2SB817E Datasheet |
|---|---|
| Manufacturer | Taitron Components |
| Overview |
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Power Dissipation at TC=25°C 2SB817E 160 140 6.0 12 15 100 0.8 1.25 -55 to +15.
* 2SB817E transistor is designed for use in general purpose power amplifier, application Mechanical Data Case: Terminals: Weight: TO-3P, Plastic Package Plated leads solderable per MIL-STD-750, Method 2026 0.22 ounce, 6.2 gram TO-3P Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol D. |
2SB817E Datasheet and Specifications PDF
The 2SB817E is a Power Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|---|
| Min Operating Temp | -55 °C |
| Part Number | 2SB817E Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ··Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1047E ·Minimum Lot-to-Lot variations f. MBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE=∞ -140 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage. |