2SB817C
Features
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- PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor
140V / 12A, AF 80W Output Applications
Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process.
Specifications ( ) : 2SB817C
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings (--)160 (--)140 (--)6 (--)12 (--)20 2.5 120 150 --55 to +150 Unit V V V A A W W °C °C
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Data Sh ee
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Base-to-Emitterr Voltage Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown...
