2SB817E
2SB817E is manufactured by Taitron Components.
Power Transistor (PNP) 2SB817E
Power Transistor (PNP)
Features
- 2SB817E transistor is designed for use in general purpose power amplifier, application
Mechanical Data
Case: Terminals: Weight: TO-3P, Plastic Package Plated leads solderable per MIL-STD-750, Method 2026 0.22 ounce, 6.2 gram
TO-3P
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Power Dissipation at TC=25°C 2SB817E 160 140 6.0 12 15 100 0.8 1.25 -55 to +150 Unit V V V A A W W/° C ° C /W °C Conditions
VCBO VCEO VEBO IC ICM Ptot
Power Dissipation Derate above 25°C
RθJC TJ,...
