2SB817E Description
(800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-04-16 Page 1 of 3 Free Datasheet http://../ Power Transistor (PNP) 2SB817E (T Ambient=25ºC unless noted otherwise) 2SB817E Symbol Description Min. Current Gain 20 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage...
2SB817E Key Features
- 2SB817E transistor is designed for use in general purpose power amplifier, application
- hFE V(BR)CBO V(BR)CEO V(BR)EBO -VCE(sat) -VBE(on) ICBO IEBO ton ts tf
- VCC=20V, IC=1.0A IB1=-IB2=100mA
- Pulse Test: Pulse Width= 300µs, Duty Cycle ≤2.0%
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