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2SB817E - Power Transistor

General Description

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Power Dissipation at TC=25°C 2SB817E 160 140 6.0 12 15 100 0.8 1.25 -55 to +150 Unit V V V A A W W/° C ° C /W °C Conditions VCBO VCEO VEBO IC ICM Ptot Power Dissipation Derate

Key Features

  • 2SB817E transistor is designed for use in general purpose power amplifier,.

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Datasheet Details

Part number 2SB817E
Manufacturer TAITRON
File Size 235.52 KB
Description Power Transistor
Datasheet download datasheet 2SB817E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistor (PNP) 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, application Mechanical Data Case: Terminals: Weight: TO-3P, Plastic Package Plated leads solderable per MIL-STD-750, Method 2026 0.22 ounce, 6.2 gram TO-3P Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Power Dissipation at TC=25°C 2SB817E 160 140 6.0 12 15 100 0.8 1.