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2SB817C - Bipolar Transistor

Key Features

  • Large current capacitance.
  • Wide SOA and high durability against breakdown.
  • Adoption of MBIT process Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Tc=25°C Conditions Ratings -160 -140 --6 --12 --20 2.5 120 150 --55 to +1.

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Datasheet Details

Part number 2SB817C
Manufacturer onsemi
File Size 168.34 KB
Description Bipolar Transistor
Datasheet download datasheet 2SB817C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.com Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Tc=25°C Conditions Ratings -160 -140 --6 --12 --20 2.5 120 150 --55 to +150 Unit V V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.