| Part Number | 2SB817C Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
Ordering number : ENA0188B
2SB817C
Bipolar Transistor
–140V, –12A, Low VCE(sat) PNP TO-3P-3L
Features
• Large current capacitance • Wide SOA and high durability against breakdown •.
* Large current capacitance * Wide SOA and high durability against breakdown * Adoption of MBIT process Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) . |
2SB817C Datasheet and Specifications PDF
The 2SB817C is a Bipolar Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SB817C Datasheet |
|---|---|
| Description | PNP Epitaxial Planar Silicon Transistor |
| Manufacturer | SANYO |
| Overview |
Ordering number : ENA0188
2SB817C / 2SD1047C
2SB817C / 2SD1047C
Features
• • •
PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor
140V / 12A,.
* * * PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 12A, AF 80W Output Applications Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Specifications ( ) : 2SB817C Absolute Maximum Ratings at Ta=25°C. |
| Part Number | 2SB817C Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max.) @IC= -5A ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device perfor. IONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE=∞ -140 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A . |