Datasheet Details
| Part number | 2SB813 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.12 KB |
| Description | PNP Transistor |
| Datasheet | 2SB813-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor 2SB813.
| Part number | 2SB813 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.12 KB |
| Description | PNP Transistor |
| Datasheet | 2SB813-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA;
| Part Number | Description |
|---|---|
| 2SB812 | PNP Transistor |
| 2SB816 | PNP Transistor |
| 2SB817C | PNP Transistor |
| 2SB817E | PNP Transistor |
| 2SB823 | PNP Transistor |
| 2SB824 | PNP Transistor |
| 2SB825 | PNP Transistor |
| 2SB826 | PNP Transistor |
| 2SB827 | PNP Transistor |
| 2SB828 | PNP Transistor |