2SB813 Overview
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) - Good Linearity of hFE - High Power Dissipation - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | 2SB813 |
|---|---|
| Description | PNP Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 208.12 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SB817 | SANYO | PNP Epitaxial Planar Silicon Transistors |
| 2SB815 | SANYO | PNP / NPN Epitaxial Planar Silicon Transistors |
| 2SB815 | onsemi | Bipolar Transistor |
| 2SB819 | Panasonic | Silicon PNP Transistor |
| 2SB810 | NEC | PNP SILICON TRANSISTOR |