| Part Number | 2SB817 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
in parentheses are for the 2SB817 only : other descriptions than those in parentheses are common to the 2SB817 and 2SD1047.
1 : Base 2 : Collector 3 : Emitter
Specifications
Absolute Maximum Ratin.
* Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). * Wide ASO because of on-chip ballast resistance. * Good depenedence of fT on current and excellent high frequency responce. Package Dimensions unit:mm 2022A [2SB817/2SD1047] The d. |
2SB817 Datasheet and Specifications PDF
The 2SB817 is a PNP Epitaxial Planar Silicon Transistors.
Key Specifications
| Max Operating Temp | 140 °C |
|---|
| Part Number | 2SB817 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1047 ·Minimum Lot-to-Lot variations for. ctor-Emitter Breakdown Voltage IC= -30mA ; RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A VBE(on) Base -Emitter On Voltage IC= -1A ; VCE= -5V ICBO Coll. |