| Part Number | 2SB816 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:677D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB816/2SD1046
For LF Power Amplifier, 50W Output Large Power Switching Applications
Features
· Capable of being mounted easily beca.
* Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). * Wide ASO because of built-in ballast resistance. * Goode dependence of fT on current and good HF characteristic. Package Dimensions unit:mm 2022A [2SB816/2SD1046] ( ) : 2SB816 S. |
2SB816 Datasheet and Specifications PDF
The 2SB816 is a PNP/NPN Epitaxial Planar Silicon Transistors.
Key Specifications
| Max Operating Temp | 140 °C |
|---|
| Part Number | 2SB816 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PN package ·Complement to type 2SD1046 ·Wide area of safe operation APPLICATIONS ·For LF Power Amplifier, 50W Output Large Power Switching Applications PINNING PIN 1 2 3 Base Collector;conne. voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;RBE=; IC=-5mA ;IE=0 IE=-5mA ;IC=0 IC=-5A; IB=-0. |
| Part Number | 2SB816 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1046 ·Minimum Lot-to-Lot variations for robust device performanc. kdown Voltage IC= -30mA ; RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A VBE(on) Base -Emitter On Voltage IC= -1A; VCE= -5V ICBO Collector Cutoff Curre. |