Sanyo Electric 2SC2812
PNP / NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
FEATURES
● Miniature package facilitates miniaturization in end products.● High breakdown voltage. Specifications ( ) : 2SA1179
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta=25°C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Marking: 2SA1179: M / 2SC2812: L ICBO IEBO hFE fT VCB=(--)35V, IE=0A VEB=(--)4V, IC=0A VCE=(--)6V, IC=(--)1mA 2SC2812 : VCE=6V, IC=1mA 2SA1179 : VCE=--6V, IC=--10mA *: The 2SA1179 / 2SC2812 are classified