Sanyo Electric 2SC3070
NPN Epitaxial Planar Silicon Transistor
| Part No. | 2SC3070 |
|---|---|
| Datasheet | 2SC3070 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
APPLICATIONS
● Low-frequency, general-purpose amplifier., various drivers, muting circuit. Package Dimensions unit:mm 2006A [2SC3070]FEATURES
● High DC current gain (hFE=800 to 3200).● Large current capacity (IC=1.2A).
● Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
● High VEBO (VEBO≥15V). EIAJ : SC-51 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions B : Base C : Collector E : Emitter SANYO : MP Ratings 30 25 15 1.2 2 240 1 150 –55 to +150 Unit V V V A A mA W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=...
