Sanyo Electric 2SC3071
NPN Epitaxial Planar Silicon Transistor
APPLICATIONS
APPLICATIONS
● Low-frequency, general-purpose amplifier., various drivers, muting circuit.FEATURES
● High DC current gain (hFE=500 to 2000).● High breakdown voltage (VCEO≥100V).
● Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
● High VEBO (VEBO≥15V). Package Dimensions unit:mm 2006B [2SC3071] EIAJ : SC-51 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=80V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=10V, IC=10mA VCB=10V, f=1MHz 1 : Emitter 2 : Collector 3 : Base SANYO : MP Ratings...