Sanyo Electric 2SC3086
the 2SC3086 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.| Part No. | 2SC3086 |
|---|---|
| Datasheet | 2SC3086 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High breakdown voltage (VCBO≥800V).● Fast switching speed.
● Wide ASO. Package Dimensions unit:mm 2010C [2SC3086] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Symbol Conditions Ratings Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation VCBO VCEO VEBO IC ICP IB PC PW≤300µs, Duty Cycle≤10% Tc=25˚C 800 500 7 3 6 1 1.75 40 Junction Temperature Tj 150 Storage Temperature Tstg –55 to +150ELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Collector Cutoff Current ICBO VCB=500V, IE=0 Emitter Cutoff Current DC Current Gain IEBO hFE1 hFE2 VEB=5V, IC=0 VCE=5V, IC=0.3A VCE=5V, IC=1.5A 15* 8 Collector-to-Emitter Saturation Voltage VCE(sat) IC=1.5A, IB=0.3A Base-to-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=0.3A * : The hFE1 of the 2SC3086 is classified as follows.
