Sanyo Electric 2SC3135
PNP/NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
FEATURES
● High VEBO.● Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2033A [2SA1253/2SC3135] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1253 Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE fT VCB=(–)40V, IE=0 VEB=(–)10V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)1mA Common Base Output Capacitance Cob VCB=(–)6V, f=1MHz * : The 2SA1253/2SC3135 are classified by 1mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 0.7 0.7 123 1.3 1.3 3.0 3.8 1 : Emitter 2 : Collector 3 : Base SANYO : SPA Ratings (...