Sanyo Electric 2SC3642
NPN Triple Diffused Planar Silicon Transistor
| Part No. | 2SC3642 |
|---|---|
| Datasheet | 2SC3642 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High reliability (Adoption of HVP process).● Fast speed.
● High breakdown voltage.
● Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3642] Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Conditions Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Storage Time Fall Time Symbol Conditions ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE tstg tf VCB=800V, IE=0 VCE=1200V, RBE=0 IC=100mA, IB=0 VEB=5V, IC=0 IC=4A, IB=0.8A IC=4A, IB=0.8A VCE=5V, IC=0.8A IC=4A, IB1=0.8A, IB2=–1.6A IC=4A, IB1=0.8A, IB2=–1.6A 1 : Base 2 : Collector 3 : Emit...
