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2SC3651 Datasheet PDF

Sanyo Electric 2SC3651

NPN Transistor

Part No. 2SC3651
Datasheet 2SC3651 Download
Manufacturer
Sanyo Electric
Description NPN Transistor
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2SC3651 datasheet page 1 preview

APPLICATIONS

APPLICATIONS

● LF amplifiers, various drivers, muting circuit.

FEATURES

● High DC current gain (hFE=500 to 2000).
● High breakdown voltage (VCEO≥100V).
● Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
● High VEBO (VEBO≥15V).
● Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SC3651] Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature * Mounted on ceramic board (250mm2×0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC* Tj Tstg

ELECTRICAL CHARACTERISTICS

at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Marking : CG ICBO IEBO hFE1 hFE2 fT Cob VCB=80V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=100mA V...
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