Sanyo Electric 2SC3749
the 2SC3749 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.| Part No. | 2SC3749 |
|---|---|
| Datasheet | 2SC3749 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High breakdown voltage and high reliability.● Fast switching speed.
● Wide ASO.
● Adoption of MBIT process.
● Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC3749] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions PW≤300µs, Duty Cycle≤10% Tc=25˚C Ratings 800 500 7 3 6 1 25 150 –55 to +150ELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=500V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.3A VCE=5V, IC=1.5A VCE=10V, IC=0.3A VCB=10V, f=1MHz Ratings min typ 15* 8 18 50 max 10 10 50* * : The hFE1 of the 2SC3749 is classified as follows.
