Sanyo Electric 2SC3807
NPN Epitaxial Planar Silicon Transistor
| Part No. | 2SC3807 |
|---|---|
| Datasheet | 2SC3807 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
APPLICATIONS
● Low frequency general-purpose amplifiers, drivers. Package Dimensions unit:mm 2043A [2SC3807]FEATURES
● Large current capacity (IC=2A).● Adoption of MBIT process.
● High DC current gain (hFE=800 to 3200).
● Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
● High VEBO (VEBO≥15V). Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C B : Base C : Collector E : Emitter SANYO : TO-126LP Conditions Ratings 30 25 15 2 4 1.2 15 150 –55 to +150 Unit V V V A A W W ˚C ˚C Tj TstgELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=500mA VCE=5V, IC=1A...
