Sanyo Electric 2SC3808
NPN Epitaxial Planar Silicon Transistor
| Part No. | 2SC3808 |
|---|---|
| Datasheet | 2SC3808 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
APPLICATIONS
● Low frequency general-purpose amplifiers, drivers.FEATURES
● Large current capacity (IC=2A).● Adoption of MBIT process.
● High DC current gain (hFE=800 to 3200).
● Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
● High VEBO (VEBO≥15V). Package Dimensions unit:mm 2043A [2SC3808] Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C ConditionsELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=50V, IE=0 VEB=10V, IC=0 VCE=5V, IC=500mA VCE=5V, IC=1A VCE=10V, IC=50mA VCB=10V, f=1MHz B : Base C : Collector E : Emitter SANYO : TO-126LP Ratings 80 60 15 2 4 1.2...
