Sanyo Electric 2SC4106
the 2SC4106 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.| Part No. | 2SC4106 |
|---|---|
| Datasheet | 2SC4106 Download |
| Manufacturer |  Sanyo Electric |
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
● High breakdown voltage and high reliability.● Fast switching speed.
● Wide ASO.
● Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4106] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 Specifications 0.8 123 2.55 2.55 0.4 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions PW≤300µs, duty cycle≤10% Tc=25˚C Ratings Unit 500 V 400 V 7V 7A 14 A 3A 1.75 W 50 W 150 ˚C –55 to +150 ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO hFE1 hFE2 hFE3 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.8A VCE=5V, IC=4A VCE=5V, IC=10mA Ratings Unit min typ max 10 µA 10 µA 15* 50* 10 10 * : The hFE1 of the 2SC4106 is classified as follows.
